sot23 npn silicon planar medium power darlington transistor issue 3 ? april 1996 features *h fe up to 5k at i c = 500ma * fast switching * low v ce(sat) at high i c partmarking details ? 614 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 10 v peak pulse current i cm 2a continuous collector current i c 500 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 120 300 v i c =10 m a, i e =0 collector-emitter sustaining voltage v ceo(sus) 100 130 v i c =10ma, i b =0* emitter-base breakdown voltage v (br)ebo 10 14 v i e =10 m a, i c =0 collector cut-off current i cbo 0.02 10 na v cb =100v, i e =0 collector cut-off current i ces 10 m a v ces =100v, i e =0 emitter cut-off current i ebo 100 na v eb =8v, i c =0 collector-emitter saturation voltage v ce(sat) 0.9 0.78 1.0 0.9 v v i c =500ma, i b =5ma* i c =100ma, i b =0.1ma base-emitter saturation voltage v be(sat) 1.7 1.9 v i c =500ma, i b =5ma* base-emitter turn-on voltage v be(on) 1.5 1.8 v i c =500ma, v ce =5v* static forward current transfer ratio h fe 15k 5k i c =100ma, v ce =5v* i c =500ma, v ce =5v* output capacitance c obo 6pfv cb =10v, f=100mhz switching times t on 0.7 m si c =100 m a, i b =0.1ma v s =10v t off 2.5 m s *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device typical characteristics graphs are in preparation. contact your local sales office for more information. FMMT614 c b e 3 - 147 FMMT614 1m 100m 10 1m 100m 10 1m 100m 10 10m 1 100 10 100m 1m 1m 100m 10 i c - collector current (a) v ce(sat) v i c 0 1 2 i c /i b =1000 i c /i b =2000 i c /i b =5000 +25c -55c 75k +100c 0 i c - collector current (a) h fe v i c +25c +100c 2 1 -55c 0 i c - collector current (a) v be(on) v i c +100c +150c 2 1 +25c 0 i c - collector current (a) v ce(sat) v i c +100c +150c 2.4 1.2 +25c 0 i c - collector current (a) v be(sat) v ic 1s 100ms 10 0.1 dc 0.001 v ce - collector emitter voltage (v) safe operating area 10ms 1ms 100 m s +150c v ce =5v +25c -55c i c /i b =1000 v ce =5v -55c i c /i b =1000 100m 10 0.01 1 10m 1 10m 1 10m 1 10m 1 10m 1 25k 50k typical characteristics page number
sot23 npn silicon planar medium power darlington transistor issue 3 ? april 1996 features *h fe up to 5k at i c = 500ma * fast switching * low v ce(sat) at high i c partmarking details ? 614 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 120 v collector-emitter voltage v ceo 100 v emitter-base voltage v ebo 10 v peak pulse current i cm 2a continuous collector current i c 500 ma power dissipation at t amb =25c p tot 500 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 120 300 v i c =10 m a, i e =0 collector-emitter sustaining voltage v ceo(sus) 100 130 v i c =10ma, i b =0* emitter-base breakdown voltage v (br)ebo 10 14 v i e =10 m a, i c =0 collector cut-off current i cbo 0.02 10 na v cb =100v, i e =0 collector cut-off current i ces 10 m a v ces =100v, i e =0 emitter cut-off current i ebo 100 na v eb =8v, i c =0 collector-emitter saturation voltage v ce(sat) 0.9 0.78 1.0 0.9 v v i c =500ma, i b =5ma* i c =100ma, i b =0.1ma base-emitter saturation voltage v be(sat) 1.7 1.9 v i c =500ma, i b =5ma* base-emitter turn-on voltage v be(on) 1.5 1.8 v i c =500ma, v ce =5v* static forward current transfer ratio h fe 15k 5k i c =100ma, v ce =5v* i c =500ma, v ce =5v* output capacitance c obo 6pfv cb =10v, f=100mhz switching times t on 0.7 m si c =100 m a, i b =0.1ma v s =10v t off 2.5 m s *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for this device typical characteristics graphs are in preparation. contact your local sales office for more information. FMMT614 c b e 3 - 147 FMMT614 1m 100m 10 1m 100m 10 1m 100m 10 10m 1 100 10 100m 1m 1m 100m 10 i c - collector current (a) v ce(sat) v i c 0 1 2 i c /i b =1000 i c /i b =2000 i c /i b =5000 +25c -55c 75k +100c 0 i c - collector current (a) h fe v i c +25c +100c 2 1 -55c 0 i c - collector current (a) v be(on) v i c +100c +150c 2 1 +25c 0 i c - collector current (a) v ce(sat) v i c +100c +150c 2.4 1.2 +25c 0 i c - collector current (a) v be(sat) v ic 1s 100ms 10 0.1 dc 0.001 v ce - collector emitter voltage (v) safe operating area 10ms 1ms 100 m s +150c v ce =5v +25c -55c i c /i b =1000 v ce =5v -55c i c /i b =1000 100m 10 0.01 1 10m 1 10m 1 10m 1 10m 1 10m 1 25k 50k typical characteristics page number
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